SurfaceScience21 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 33: Poster Session III: Semiconductor substrates I
O 33.3: Poster
Dienstag, 2. März 2021, 10:30–12:30, P
Atomic and electronic structure of the GaP/Si(001) heterointerface studied by HAXPES — •Agnieszka Paszuk1, Oleksandr Romanyuk2, Igor Bartoš2, Regan G. Wilks3, Manali Nandy1, Jakob Bombsch3, Claudia Hartmann3, Raül Garcia-Diez3, Shigenori Ueda4, Ivan Gordeev2, Jana Houdkova2, Peter Kleinschmidt1, Marcus Bär3, Peter Jiříček2, and Thomas Hannappel1 — 1Institute of Physics, University of Technology, Ilmenau, Germany — 2Institute of Physics, Prague, Czech Republic — 3Department Interface Design, Helmholtz-Zentrum Berlin, Germany — 4SPring-8, National Institute for Materials Science, Japan
For highly efficient III-V-on-Si optoelectronic devices it is crucial to prepare defect-free heterointerfaces with defined electronic properties. Commonly a thin, pseudomorphic GaP epilayer is deposited on Si prior to further III-V buffer growth, due to its close lattice matching to Si. Here, the atomic and electronic structure of buried GaP/Si(001) heterointerfaces prepared by MOCVD were investigated by hard X-ray photoelectron spectroscopy combined with theoretical modelling. 4 - 50 nm thick GaP films with a different density of antiphase domain boundaries were grown on Si(001) H-terminated surfaces, as controlled by optical in situ spectroscopy. We found that the core-level positions and width changes with GaP film thickness and Si substrate type. These observations were related to charge displacements and band bending effects at the interface. In consequence, an inter-diffused layer interface structure model based on the formation of Si-P bonds at the heterointerface and P-doping of the Si substrate was suggested.