Erlangen 2022 – scientific programme
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Q: Fachverband Quantenoptik und Photonik
Q 46: Nano-Optics I
Q 46.2: Talk
Thursday, March 17, 2022, 11:00–11:15, Q-H11
Shallow implantation of color centers in silicon carbide with high-coherence spin-optical properties — •Timo Steidl1, Tobias Linkewitz1, Raphael Wörnle1, Charles Babin1, Rainer Stöhr1, Di Liu1, Erik Hesselmeier1, Marcel Krumrein1, Naoya Morioka1, Vadim Vorobyov1, Andrej Denisenko1, Mario Hentschel1, Christian Gobert2, Patrick Berwian2, Georgy Astakhov3, Wolfgang Knolle4, Sridhar Majety5, Pranta Saha5, Marina Radulaski5, Nguyen Tien Son6, Jawad Ul-Hassan6, Florian Kaiser1, and Jörg Wrachtrup1 — 1Universität Stuttgart, GER — 2Fraunhofer IISB, Erlangen, GER — 3HZDR, Dresden, GER — 4IOM, Leipzig, GER — 5University of California, Davis, USA — 6Linköping University, SWE
The accurate positioning of optically active color centers in the center of efficient photonic interfaces is a requirement for next-generation solid-state quantum information devices. Here, we report the creation of shallow VSi centers in SiC with high spatial resolution using low ion energy implantation of protons, He ions and Si ions. We observe remarkably robust spin-optical properties attributed to the minimized collateral crystal damage. In particular, we show nearly lifetime limited absorption lines and the highest reported Hahn echo time of the system. We will also show our initial results on defect generation based on He focussed ion beam implantation, which is a promising solution for nanophotonic devices. Our results highlight the tremendous potential of the SiC platform, and provide a crucial step towards the integration of VSi into nanophotonic resonators.