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ST: Fachverband Strahlen- und Medizinphysik

ST 9: Detectors and Applications II

ST 9.5: Talk

Thursday, March 24, 2022, 15:00–15:15, ST-H4

Single Photon Avalanche Diodes with an on-chip integrated preamplifier to improve single photon time resolution — •Jonathan Preitnacher¹, Wolfgang Schmailzl¹, Sergei Ageev², and Walter Hansch¹ — ¹Bundeswehr University Munich, Neubiberg, Germany — ²The Moscow Engineering Physics Institute- Kashira Hwy, 31, Moscow, Russland, 115409

Silicon photomultiplier (SiPM) are solid-state detectors used for applications requiring high timing resolution and single photon sensitivity and play an important role in various measurement methods in high energy physics or in fields of medical imaging. To further improve the measurements in such applications, an enhanced single photon time resolution (SPTR) on the SiPM is required. For this we designed and implemented a small array of 4x4 single photon avalanche diodes (SPAD) in CMOS 350 nm technology and combined it with an on-chip integrated amplifier. The amplifier is a modified Regulated Common Gate (RCG) circuit and consists of an n-MOS based current follower with additional amplification stages that provides a stable signal and a fast slew rate, which are necessary conditions for a good SPTR. The standard characterization of the SiPM using parameters such as IV-curves, breakdown voltage, dark count rate, crosstalk, gain and afterpulsing shows acceptable results. Furthermore, first measurements of SPTR with a femtosecond laser and an oscilloscope with 10 GHz bandwidth show that it is possible to measure SPTR down to 42 ps FWHM. The results and different contributions to the SPTR are also discussed.