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ST: Fachverband Strahlen- und Medizinphysik
ST 9: Detectors and Applications II
ST 9.6: Talk
Thursday, March 24, 2022, 15:15–15:30, ST-H4
Space applications - Measuring the effect of total ionization dose on field-effect transistors — •Erik Jozsef1, Andreas Reeh2, Hans-Georg Zaunick2, Kai-Thomas Brinkmann2, and Uwe Probst1 — 1Technische Hochschule Mittelhessen, Gießen, Germany — 2Justus-Liebig University, Gießen, Germany
Compared to terrestrial applications the utilization of electronics in space environment meets several additional requirements to ensure functional reliability. One of the key requirements is the radiation hardness of the electronic components. Field-effect transistors are vital for modern electronics and are commonly used in power electronics. This presentation shows a method how radiation hardness of switching transistors can be investigated qualitatively. Parameters relevant to operation, such as threshold voltage, parasitic capacitances and leakage currents are to be measured. Measuring methods, process and equipment are presented. EU regional development funding via the EFRE scheme of the State of Hesse is gratefully acknowledged.