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P: Fachverband Plasmaphysik

P 2: Low Pressure Plasmas I

P 2.1: Vortrag

Montag, 28. März 2022, 14:00–14:15, P-H11

Influence of a remote plasma on the chemical vapour deposition of ZrO2 based layers — •Philipp A. Maaß¹, Vitali Bedarev¹, Sebastian M. J. Beer², Marina Prenzel¹, Marc Böke¹, Anjana Devi², and Achim von Keudell¹ — ¹Experimental Physics II, Ruhr-University, Bochum, Germany — ²Inorganic Chemistry II, Ruhr-University, Bochum, Germany

Chemical vapour deposition (CVD) is a widely applied technique used for thin film deposition. The combination with a plasma source (PECVD) enables the fine-tuning of parameters, opening new possibilities for the fabrication of functional coatings, such as thin thermal barrier coatings.

A metalorganic precursor is transported into the reaction chamber by a 50 sccm N2-flow at pressures of   100 Pa. A ZrO2 layer is deposited onto a heated substrate in the centre of the chamber with a growth rate of several 100 nm/h. To influence and improve the reaction chemistry, a microwave plasma source is mounted opposite the substrate surface. It interacts with the incoming precursor molecules, with the aim to reduce the reaction temperature and change the deposition properties.

During this process, the growth rate and substrate temperature are monitored by in-situ ellipsometry. The deposited layers are characterised in stoichiometry and crystallinity, using X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD).

Depositions are carried out with and without the use of the plasma source. The different growth characteristics are investigated and compared.