Regensburg 2022 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 11: Focus Session: Quantum Properties at Functional Oxide Interfaces 1 (joint session HL/DS)
DS 11.3: Vortrag
Dienstag, 6. September 2022, 10:30–10:45, H34
Electron transport of the two-dimensional electron gas in polar-discontinuity doped LaInO3/BaSnO3 heterostructure — Georg Hoffmann1, Fazeel Zohair1, Martina Zupancic2, Martin Albrecht2, and •Oliver Bierwagen1 — 1Paul-Drude-Institut für Festkörperelektronik Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, D-10117 Berlin, Germany — 2Leibniz-Institut für Kristallzüchtung im Forschungsverbund Berlin e.V., Max-Born-Straße 2 D-12489 Berlin, Germany
Transparent semiconducting oxides (TSOs) are key players for new (opto-)electronic devices and two-dimensional electron gases (2DEGs) are relevant for high-frequency applications. Polar-discontinuity doping (interfacing a polar material with a nonpolar one), has been demonstrated to provide a 2DEG at the interface between the perovskites LaAlO3 and SrTiO3 with a high electron concentration but suffers from low room-temperature (RT) electron mobilities of SrTiO3. In this contribution we demonstrate polar-discontinuity doped 2DEG at the interface between the perovskites LaInO3 and BaSnO3, grown by plasma-assisted molecular beam epitaxy. While the individual, undoped oxide layers were found to be insulating, the formation of the polar-discontinuity doped 2DEG at their interface is confirmed by capacitance-voltage (CV) and van der Pauw-Hall measurements. The extracted sheet electron concentrations >2e13cm^-2 and RT electron mobilities above >50cm^2/Vs are promising for device applications. The transport properties of the 2DEG are compared to those of La-doped BaSnO3 layers.