Regensburg 2022 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 2: Focus Session: Innovative GaN-based High-power Devices: Growth, Characterization, Simulation, Application 1
DS 2.4: Hauptvortrag
Montag, 5. September 2022, 10:45–11:15, H17
Potential of Aluminum Nitride for Vertical Power Electronics — •Andreas Waag1,2, Klaas Strempel1,2, Lukas Peters1,2, Christoph Margenfeld1,2, Samuel Faber3, Friedhard Römer3, and Bernd Witzigmann3 — 1Institute of Semiconductor Technology, Technische Universität Braunschweig, Hans-Sommer-Straße 66, 38106 Braunschweig, Germany — 2Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, Langer Kamp 6, 38106 Braunschweig, Germany — 3Institute for Optoelectronics, Friedrich-Alexander Universität Erlangen-Nürnberg, Konrad-Zuse Str. 3/5, 91052 Erlangen, Germany
Owing to its excellent material properties, AlN is considered to be highly promising for power electronics. One of the main obstacles for AlN, however, is the poor availability of single crystal substrates. A particularly promising technique is the high temperature annealing (HTA) of sputtered AlN thin films on sapphire. AlN is one of the few compound semiconductors, which is curing its crystal lattice during HTA without thermal decomposition or evaporation if processed in a face-to-face configuration.
In addition to the material aspects, we discuss the design of AlN devices, supported by TCAD simulations, combining microscopic drift-diffusion currents with electron/hole continuity equations and the Poisson equation.