Regensburg 2022 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
DS: Fachverband Dünne Schichten
DS 20: Poster
DS 20.25: Poster
Mittwoch, 7. September 2022, 16:00–18:00, P3
Bottom-up preparation of large area van-der-Waals heterostructures by the subsequent growth of 2D transition metal dichalcogenides layers — •Devendra Pareek1, Marco A. Gonzalez1, Nedal Grewo1, Marten L. Janßen1, Leon A. Gräper1, Kumarahgiri Arunakiri1, Kayode. L. Alimi1, Martin Silies1,2, Jürgen Parisi1, Levent Gütay1, and Sascha Schäfer1 — 1Ultrafast Nanoscale Dynamics, Institute of Physics, Carl von Ossietzky University of Oldenburg, Oldenburg, Germany — 2Institute for Lasers and Optics, University of Applied Sciences Emden/Leer, Emden, Germany
We report the preparation of as-grown two-dimensional transition metal dichalcogenides (2D-TMDC) heterostructures from a processing route employing a combination of atomic layer deposition of monolayer MoS2 and solution-based processing of ultrathin Mo(S/Se)2 and W(S/Se)2 films. Grown on centimeter-scale sapphire substrates, spatially uniform optoelectronic characteristics of the individual TMDC layers and heterostructures are demonstrated down to micrometer length scales using photoluminescence, Raman spectroscopy, and light-beam-induced current measurements. Preliminary observations on enhanced photogenerated currents in MoS2-MoS2/WS2 lateral heterostructures demonstrate the suitability of this approach for the preparation of functional devices on macroscopic length scales. Finally, we also discuss the possibilities to synthesize these compounds at temperatures below 400 ∘C, making them suitable for a broad range of substrate materials.