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DS: Fachverband Dünne Schichten

DS 20: Poster

DS 20.45: Poster

Mittwoch, 7. September 2022, 16:00–18:00, P3

Enhanced amorphization of Cu-Sn-I alloy thin films fabricated by reactive magnetron sputtering — •Christiane Dethloff, Sofie Vogt, Tillmann Stralka, Daniel Splith, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Leipzig, Deutschland

CuI is a promising p-type semiconductor for optoelectronical applications due to various advantageous material properties such as transparency in the visible spectrum [1] and its earth abundant, cheap and non-toxic constituents. Growth of amorphous layers of CuI by solution processing has already been reported [2, 3]. The feasibility of deposition of the amorphous Cu-Sn-I alloy has not yet been demonstrated for a physical, scalable process, such as sputtering.

We present our investigations of the influence of the process parameters during the deposition of a Cu-Sn-I-alloy using reactive co-sputtering of Cu and Sn in a reactive iodine ambient. A dependence of the growth rate, the thin films morphology and the electrical properties on the process parameters i.e. the magnitude of the electrical power applied at the sputtering sources, the iodine partial pressure and the chamber pressure. A decrease of crystallinity was observed by XRD measurements for increasing sputtering power applied on the tin target as well as with increasing chamber pressure. LSM and AFM measurements yielded root-mean-square surface roughnesses below 10 nm.

[1] M. Grundmann et al. Phys. Status Solidi A 210, 1671 (2013);

[2] H. Wu et al. Appl. Phys. Lett. 118, 222107 (2021);

[3] T. Jun et al. Advanced materials 30, e1706573 (2018).