Regensburg 2022 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 20: Poster
DS 20.6: Poster
Mittwoch, 7. September 2022, 16:00–18:00, P3
Pseudo-2-dimensional Ga2O3 structures grown on Al2O3 using metal-oxide catalyzed epitaxy (MOCATAXY) — •Justin Andreas Bich1, Marco Schowalter1, Tjark Liestmann1, Sushma Raghuvansy1, Jonathan McCandless2, Manuel Alonso-Orts1, Andreas Rosenauer1, Martin Eickhoff1, and Patrick Vogt1 — 1Institute of Solid-State Physics, Bremen University, Otto-Hahn-Allee 1, 28359 Bremen, Germany — 2School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA
Ga2O3 has attracted attention as a new wide-bandgap semiconductor—which can be alloyed with Al2O3—for high-power applications. However, the growth of group-III sesquioxides by molecular-beam epitaxy differs substantially from other material systems, e.g., III-V materials.
In this work, we present the growth of ultra-thin α-Ga2O3 (0001) on α-Al2O3 (0001) in a controlled self-passivating manner. Using MOCATAXY, we observe the formation of this ’pseudo’ 2-dimensional (2D) α-Ga2O3 thin film and its growth passivation after reaching 2 nm thickness. This α-Ga2O3 2D thin film serves as a template for growing α-Ga2O3/α-Al2O3 quantum wells.
We present reflection-high energy electron diffraction, x-ray photoelectron spectroscopy, atomic force microscopy, x-ray diffraction, x-ray reflectivity, and transmission electron microscopy data, showing the existence and characteristics of this ’pseudo’ 2D α-Ga2O3 thin film grown by MOCATAXY, and explain our results using a kinetic and thermodynamic framework.