Regensburg 2022 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 25: Transport Properties
DS 25.2: Vortrag
Donnerstag, 8. September 2022, 15:15–15:30, H14
Towards ultraclean correlated metal CaVO3 - Electric Transport Measurements — •Mahni Müller1, Tatiana Kuznetsova2, Roman Engel-Herbert2,3, and Saskia F. Fischer1 — 1Novel Materials Group, HU Berlin, 10099 Berlin, Germany — 2Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA. — 3Paul-Drude-Institut für Festkörperelektronik, 10117 Berlin, Germany
High-performance and cost-effective transparent materials are in great demand in the optoelectronic industry. The enhancement of the carrier effective mass through strong electron-electron interactions in correlated metals is a promising approach to achieve both high-optical transparency and high-electrical conductivity [1].
In this work we study the electric transport characteristics of CaVO3 films with a thickness of 55 nm grown on LAO substrates. The films were deposited by hybrid molecular beam epitaxy with different partial pressures of the metalorganic vanadium oxytriisopropoxide precursor. Calcium was supplied through a solid state effusion cell. The optimal growth window estimated by X-ray diffraction was narrowed down by residual-resistance ratio (RRR) measurements. Temperature dependent resistivity and hall measurements were performed between 4.2 K and 300 K. The RRR was tripled compared to previous substrate [2]. Furthermore, the films with highest RRR ≈ 98 showed an increase of mobility with decreasing temperature with over 2000 cm/V · s at 4.2 K.
[1] Zhang, Lei, et al.; Nature materials 15.2, 204-210 (2016).
[2] Eaton, Craig, et al.; J. Vac. Sci. Technol. 35.6, 061510, (2017).