Regensburg 2022 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 25: Transport Properties
DS 25.3: Vortrag
Donnerstag, 8. September 2022, 15:30–15:45, H14
Electro-Thermal Resistive Switching at the Insulator to Metal Transition in Strongly Correlated Materials — •Stefan Guénon1, Matthias Lange1, Yoav Kalcheim2,3, Theodor Luibrand1, Farnaz Tahouni1, Reinhold Kleiner1, Ivan K Schuller2, and Dieter Koelle1 — 1Physikalisches Institut, Center for Quantum Science (CQ) and LISA+, Universität Tübingen, 72076 Tübingen, Germany — 2Department of Physics and Center for Advanced Nanoscience, University of California - San Diego La Jolla, CA 92093, USA — 3Department of Materials Science and Engineering, Technion - Israel Institute of Technology, Technion City, 32000 Haifa, Israel
Electro-thermal (Joule-heating driven) resistive switching devices are investigated in the emerging field of neuromorphic computing. In a bio-mimetic approach, the memristive properties of such devices are used to emulate neurons and synapses. This talk explains how the considerable resistance change at the insulator-to-metal transition leads to electro-thermal instability. A metallic filament forms above a certain threshold current due to current and temperature redistribution if a device is electrically biased in this unstable temperature regime. We will complement the explanation with experimental results from microscopic studies on V2O3-devices, in which photomicrographs were acquired during filament formation. Further, we will discuss how additional device properties like thermal hysteresis or structural phase separation affect electro-thermal resistive switching. The U.S. Department of Energy supported this work under Award # DE-SC0019273.