Regensburg 2022 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 26: Thin Oxides and Oxide Layers 2
DS 26.1: Vortrag
Donnerstag, 8. September 2022, 16:15–16:30, H14
Studying the differences of Ga2O3 grown by conventional molecular-beam epitaxy (MBE) and suboxide MBE (S-MBE) — •Sushma Raghuvansy1, Justin A. Bich1, Tjark Liestmann1, Jonathan McCandless2, Manuel Alonso-Orts1, Darrell G. Schlom3, Martin Eickhoff1, and Patrick Vogt1,3 — 1Institute of Solid-State Physics, Bremen University, Otto-Hahn-Allee 1, 28359 Bremen, Germany — 2School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA — 3Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
The growth of Ga2O3 by conventional MBE, i.e., when supplying elemental Ga and active O, is limited by the formation and subsequent desorption of its volatile suboxide, Ga2O. During suboxide MBE (S-MBE), a recently developed new MBE variant, suboxides (here: Ga2O) are supplied during growth, bypassing the reaction limiting steps experienced during conventional Ga2O3 MBE growth by conventional MBE, and extending its kinetic and thermodynamic limits. S-MBE enables the synthesis of Ga2O3 at much higher growth rates (> 1 μm h-1) and displays improved crystallinity and surface morphology compared with Ga2O3 thin films grown by conventional MBE.
This talk presents a direct comparison of Ga2O3 thin films grown by conventional MBE versus Ga2O3 thin films grown by S-MBE. We will show the impact of both MBE variants on the crystallinity and surface morphology of Ga2O3/Al2O3 heterostructures.