Regensburg 2022 – wissenschaftliches Programm
KFM 25.3: Poster
Donnerstag, 8. September 2022, 15:00–18:00, P2
Influence of sulfur doping on the creation yield of near-surface nitrogen vacancy centers and their charge state ratio — •Sven Graus1, Ulrich Köhler1, Tobias Lühmann2, and Jan Meijer2 — 1Lehrstuhl für Experimentalphysik IV, Ruhr-Universität Bochum — 2Felix-Bloch-Institut für Festkörperphysik, Angewandte Quantensysteme, Universität Leipzig
The negative charge state of nitrogen vacancy (NV) centers presents an extremely attractive candidate for a number of applications in quantum information technology and magnetometry. However, the implantation of near-surface NV centers shows a low yield and they have the tendency to convert into the neutral charge state. Recently, a significant increase in the creation yield of negative NV centers in the bulk of the diamond has been achieved by prior local doping of sulfur. We report on the in-situ implantation of sulfur and subsequent nitrogen implantation at energies of up to 5 keV while the sample is heated to temperatures of up to ∼800 ∘C under UHV conditions. Our setup presents a unique method for the implantation of near surface NV centers in small laboratories. First results on how these parameters influence the creation yield of negative NV centers close to the surface are presented.