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MM: Fachverband Metall- und Materialphysik

MM 13: Non-equilibrium Phenomena in Materials Induced by Electrical and Magnetic Fields 3

MM 13.5: Talk

Tuesday, September 6, 2022, 12:00–12:15, H45

Structure and Morphology Engineering of Hexagonal Boron Nitride (h-BN) using Magnetic Field assisted CVD — •Anja Sutorius, Michael Wilhelm, Khan Lê, Ziyaad Aytuna, and Sanjay Mathur — University of Cologne, Cologne, Germany

The aim for two dimensional materials namely graphene, MoS2 and borophene has become a high interest due to their amazing properties (e.g. conductivity, flexibility, dimensionality) and demand for innovative electronic device applications. The large band gap material h-BN catches the attention of latest research due to its non-toxicity, environmentally friendly and chemical stability as well as its dielectric properties. The commonly preparation of h-BN often requires a gas phase deposition on catalytic metals at very high temperatures and is despite intense research very challenging. A new opportunity is provided using an external magnetic field during synthesis. Precursor molecules like amino borane (NH3BH3) or dimethyl amino borane (CH3)2NBH2 and h-BN itself exhibit a charge distribution and thus can be influenced by an applied field. Here, we would like to report about the thin film formation of h-BN with and without an external magnetic field on a variety of substrates ranging from catalytic metal substrates to non-catalytic dielectric silicon substrates. Results from infrared and x-ray photoelectron spectroscopy, as well as transmission and scanning microscopy.