Regensburg 2022 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 2: Ultrafast Electron Dynamics at Surfaces and Interfaces 1
O 2.5: Vortrag
Montag, 5. September 2022, 11:30–11:45, H3
Non-equilibrium carrier dynamics of different surface reconstructions of Sn on SiC(0001) — •Maximilian Stecher1, Maria-Elisabeth Federl1, Niklas Hofmann1, Leonard Weigl1, Johannes Gradl1, Neeraj Mishra2,3, Stiven Forti2, Camilla Coletti2,3, and Isabella Gierz1 — 1Department of Physics, University of Regensburg, 93040 Regensburg, Germany — 2Center for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia, 56127 Pisa, Italy — 3Graphene Labs, Istituto Italiano di Tecnologia, 16163 Genova, Italy
Sn on SiC(0001) forms different surface reconstructions in the monolayer coverage regime, among them a Mott insulating phase with a (√(3)x√(3))R30∘ structure. We grow these structures and characterize them with low-energy electron diffraction (LEED), X-ray photoemission spectroscopy (XPS), and angle-resolved photoemission spectroscopy (ARPES). We then investigate their light-induced non-equilibrium carrier dynamics with time- and angle-resolved photoemission spectroscopy, looking for possible photo-induced phase transitions and metastable transient states. These preliminary studies then pave the way towards dynamical control of the electronic properties of Sn/SiC(0001) via resonant excitation of the IR-active phonon modes of the substrate that will modulate the atomic positions of the covalently bound Sn layer coherently.