Regensburg 2022 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 30: Semiconductor Surfaces
O 30.6: Vortrag
Dienstag, 6. September 2022, 12:00–12:15, S053
Structure and origin of antiphase domains and related defects in thin GaP epilayers on As-modified Si(100) — •Franz Niklas Knoop1, Agnieszka Paszuk2, Benjamin Borkenhagen1,3, Oliver Supplie2,4, Manali Nandy2, Gerhard Lilienkamp1, Peter Kleinschmidt2, Thomas Hannappel2, and Winfried Daum1 — 1IEPT, TU Clausthal — 2Institute of Physics, TU Ilmenau — 3Fallstein Gymnasium Osterwieck — 4Physics Department, HU Berlin
The deposition of low-defect III-V-layers on Si(100) is impaired by the formation of antiphase domains (APDs) in the epilayer. We study the origin and formation of APDs and related defects in thin GaP buffer layers on nearly-single-domain, As-modified Si(100) substrates. By comparing results obtained by low energy electron microscopy (LEEM), AFM, STM and scanning Auger electron microscopy, we identify two different types of APD-related defects in the GaP layer and trace these defects back to residual minority (2x1) domains of the Si substrate. GaP growth on minority domain terraces with widths in the range 40-100 nm gives rise to APDs of comparable lateral dimensions. The observation of trench-like defects in the epilayer extending down to the surface of the substrate indicates that homogeneous layer-by-layer growth of GaP is impeded on narrow terraces (<20 nm) of the (2x1)-reconstructed minority domain of the substrate. We propose that insufficient nucleation of GaP on these terraces leads to the formation of trenches, while on wider minority terraces APDs are formed by 3D-like growth.