Regensburg 2022 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 6: Kondo Physics, f-Electron Systems and Heavy Fermions
TT 6.10: Vortrag
Montag, 5. September 2022, 17:30–17:45, H22
Influence of substrate clamping in epitaxial EuPd2Si2 thin films — •Sebastian Kölsch1, Cornelius Krellner1, Hans-Joachim Elmers2, and Michael Huth1 — 1Goethe Universität, Frankfurt (Main) — 2Johannes Gutenberg-Universität, Mainz
Europium-based ternary compounds, which crystallize in the tetragonal ThCr2Si2 structure, reveal a variety of interesting phenomena, which are attributed to strong electronic correlations and a competition between Kondo effect and the RKKY interaction. Recently EuPd2Si2 gained increased interest due to a temperature-driven valence transition from nearly Eu2+ above 200 K to Eu3+ below about 50 K. This rapid but continuous change of the Europium mean valence is accompanied by a relative change of the EuPd2Si2 a lattice constant by about -2 % reflecting the strong coupling of lattice and electronic degrees of freedom. For epitaxial thin films of this material the underlying substrate has to be taken into account. In this case the change of the lattice constants due to clamping to the substrate impacts the possible thermal expansion of the corresponding in-plane components. So far research has focused on optimizing single crystal growth conditions under different doping scenarios to tune the system into a critial endpoint. Epitaxial thin films instead offer the possibility to strain-engineer this correlated system by appliying biaxial strain to the thin film material upon cooling.
Here we present for the first time the successful growth of EuPd2Si2 as epitaxial thin film and report our recent results regardings its clearly distinct properties as compared to single crystals.