SKM 2023 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 51: Nitrides: Preparation and Characterization
HL 51.3: Vortrag
Freitag, 31. März 2023, 10:00–10:15, POT 112
Molecular beam epitaxy growth study and characterization of HoN thin films — •Anna Melendez-Sans1, Vanda M. Pereira1, Chun-Fu Chang1, Chang-Yang Kuo1,2,3, Chien-Te Chen2, Liu Hao Tjeng1, and Simone G. Altendorf1 — 1Max Planck Institute for Chemical Physics of Solids, Dresden, Germany — 2National Synchrotron Radiation Research Center, Hsinchu, Taiwan — 3Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
Rare earth nitrides show potential for a wide range of applications due to their strong magnetic moment and semiconducting behavior. However, their synthesis and characterization has proven challenging since they rapidly oxidize when exposed to ambient conditions. Thanks to continuous developments in UHV-based thin film growth methods it is possible to grow high quality rare earth nitride films and, through the characterization of these, gain better insight into these compounds.
Whilst there have been many reports on GdN and SmN, not much is yet known about HoN. Now we present a systematic growth study on HoN thin films synthesized by molecular beam epitaxy (MBE), and using different substrates (MgO, LaAlO3) and growth conditions (substrate temperatures and Nitrogen-gas pressure). These films were subsequently characterized using in situ techniques (Reflection high-energy electron diffraction, X-ray absorption and photoelectron spectroscopy) and ex situ techniques (X-ray diffraction, Superconducting quantum interference device) in order to evaluate their crystalline, electronic and magnetic structure.