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HL: Fachverband Halbleiterphysik
HL 51: Nitrides: Preparation and Characterization
HL 51.6: Vortrag
Freitag, 31. März 2023, 11:00–11:15, POT 112
SmN thin films: MBE-growth and spectroscopy studies — •Vanda M. Pereira1, Anna Melendez-Sans1, Chun-Fu Chang1, Chang-Yang Kuo1,2,3, Chien-Te Chen2, Liu Hao Tjeng1, and Simone G. Altendorf1 — 1Max Planck Institute for Chemical Physics of Solids, Dresden, Germany — 2National Synchrotron Radiation Research Center, Hsinchu, Taiwan — 3Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
Although the rare earth nitrides have been in the scientific scene for many decades, their poor stoichiometry and reactivity in ambient conditions have severely conditioned their progress. It has been only rather recently that studies on thin films have started to unveil some of their unique characteristics and solve decades-old controversies, but there are still significant gaps left to explore.
Recent studies on the ferromagnetic semiconductor SmN suggest that the 4f bands are involved in electron transport and are crucial to the observed superconductivity in nitrogen-vacancy doped samples. Nevertheless, more concrete experimental evidence is needed.
Here we present a systematic study of SmN thin films grown by molecular beam epitaxy, exploring their crystalline quality and composition as the growth parameters (substrate temperature and nitrogen pressure) are varied. The films were characterized in situ making use of photoemission and x-ray absorption spectroscopies, thereby allowing to reliably gain more insight into the electronic structure of this material.