 |
09:30 |
HL 51.1 |
High resistive buffer layers by Fermi-level engineering — •Armin Dadgar, Ralf Borgmann, and André Strittmatter
|
|
|
|
09:45 |
HL 51.2 |
yolo-assisted object detection of dislocation-related pits on GaN surfaces using generative adversarial networks — •Mahdi Khalili Hezarjaribi, Uwe Rossow, Heiko Bremers, and Andreas Hangleiter
|
|
|
|
10:00 |
HL 51.3 |
Molecular beam epitaxy growth study and characterization of HoN thin films — •Anna Melendez-Sans, Vanda M. Pereira, Chun-Fu Chang, Chang-Yang Kuo, Chien-Te Chen, Liu Hao Tjeng, and Simone G. Altendorf
|
|
|
|
10:15 |
HL 51.4 |
Theoretical study on the (Al,Sc)N random alloy — •Jan M. Waack, Markus Kremer, Michael Czerner, and Christian Heiliger
|
|
|
|
10:30 |
HL 51.5 |
Thermal Transport in c-plane GaN Membranes Studied by Raman Thermometry — •Wilken Seemann, Joachim Ciers, Isabell Hüllen, Mahmoud Elhajhasan, Jean-François Carlin, Nicolas Grandjean, Åsa Haglund, and Gordon Callsen
|
|
|
| |
10:45 |
|
15 min. break
|
|
|
|
11:00 |
HL 51.6 |
SmN thin films: MBE-growth and spectroscopy studies — •Vanda M. Pereira, Anna Melendez-Sans, Chun-Fu Chang, Chang-Yang Kuo, Chien-Te Chen, Liu Hao Tjeng, and Simone G. Altendorf
|
|
|
|
11:15 |
HL 51.7 |
Growth of ScN and AlScN by reactive sputter epitaxy — •Florian Hörich, Christopher Lüttich, Ralf Borgmann, Jürgen Bläsing, André Strittmatter, and Armin Dadgar
|
|
|
|
11:30 |
HL 51.8 |
On the variation of PL intensity in GaInN/GaN quantum wells with different cladding thicknesses — •Nico Wagner, Shawutijiang Sidikejiang, Philipp Henning, Rodrigo de Vasconcellos Lourenço, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter
|
|
|
|
11:45 |
HL 51.9 |
Optical properties of ScN films grown by HVPE and sputter epitaxy — •Jona Grümbel, Yuichi Oshima, Christopher Lüttich, Armin Dadgar, Martin Feneberg, and Rüdiger Goldhahn
|
|
|
|
12:00 |
HL 51.10 |
Temperature dependent spectroscopic ellipsometry on cubic GaN — •Jonas Rose, Elias Baron, Rüdiger Goldhahn, Michael Deppe, Donat J. As, and Martin Feneberg
|
|
|
