SKM 2023 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 32: Semiconductor Substrates
O 32.2: Vortrag
Dienstag, 28. März 2023, 10:45–11:00, GER 39
Post-synthesis of copper nitride monolayers from copper oxide films — •Mohammadreza Rostami1, Biao Yang1, Francesco Allegretti1, Lifeng Chi2, and Johannes V. Barth1 — 1Physics Department E20, Technical University of Munich, Garching, 85748, Germany — 2Institute of Functional Nano & Soft Materials, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215123, P. R. China
Copper nitride (CuN) thin films represent insulating layers bearing promise for decoupling functional structures from a metallic copper substrate. [1] Although the nitrogen ion bombardment method was successfully applied for the in-situ preparation of CuN monolayers on Cu surfaces, the reduced domain size limits their application potential. [2] In this work, we have grown extended monolayer CuN films on Cu (111) surfaces by ammonia-mediated post-annealing of copper oxide (CuO) thin films. Structures and properties of CuN and CuO monolayers were characterized by scanning tunneling microscopy and low-energy electron diffraction. The element exchange of nitrogen with oxygen in the respective CuN and CuO layers on Cu (111) surfaces was evidenced by X-ray photoelectron spectroscopy. This oxidation-reduction two-step strategy provides a new approach to fabricate CuN buffer layers. [1] Z. Zhao et al, Adv. Electron. Mater. 2018, 4, 1700367 [2] H. Baek et al, Appl. Phys. Lett. 91, 253106 (2007)