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O: Fachverband Oberflächenphysik

O 48: Focus Session: Semiconductor Surface Chemistry – from Reaction Mechanisms to Well-Ordered Interfaces I

O 48.3: Topical Talk

Mittwoch, 29. März 2023, 11:15–11:45, GER 38

Growth of organic monolayers on Si(111) — •Martin Franz — Technische Universität Berlin, Institut für Festkörperphysik, Berlin, Germany

The ever-growing number of semiconductor based applications leads to an increasing demand for a modification or functionalization of surfaces with organic molecules. However, while the formation of self-assembled monolayers of organic molecules is well established on metal surfaces, the high density of dangling bonds present on most clean semiconductor surfaces typically reduces the mobility of molecules preventing an ordered growth. A route to overcome this constraint is the modification of the surface, allowing to precisely adjust the substrate-molecule interaction enabling a controlled growth.

In this talk, examples of organic films on modified Si(111) surfaces are given, which were investigated using scanning tunneling microscopy as well as tunneling and photoelectron spectroscopy. A prominent example in this regard is the boron-modified Si(111)√3×√3R30^∘-B surface. Here, results for N-heterocyclic carbenes, which form highly ordered monolayers with promising properties [1], and for cobalt phthalocyanine [2-3] are discussed. Further examples given include the influence of surface defects on the molecular adsorption process and the use of indium-modified Si(111) as substrate [4].

[1] M. Franz et al., Nat. Chem. 13, 828 (2021).

[2] S. Lindner et al., Phys. Rev. B 100, 245301 (2019).

[3] H. Aldahhak et al., Phys. Rev. B 103, 035303 (2021).

[4] M. Kubicki et al., Appl. Phys. Lett. 119, 133105 (2021).