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O: Fachverband Oberflächenphysik

O 56: 2D Materials III: Growth, Structure and Substrate Interaction II (joint session O/CPP)

O 56.10: Talk

Wednesday, March 29, 2023, 17:15–17:30, GER 37

Growth and structure of two-dimensional single-layer HfS₂ on Au(111) — •Monika Schied, Paolo Lacovig, and Silvano Lizzit — Elettra-Sincrotrone Trieste

HfS₂ is a promising 2D material for low-power semiconductor devices due to its predicted high electron mobility and low contact resistance for n-type carrier transport. For actual applications, layers with excellent structural and electronic properties are needed. However, films with the necessary quality are only available from exfoliation, which is neither scalable nor very reproducible and only few experimental studies on a single-layer (SL) of HfS₂ have been performed so far. In analogy to the growth of high-quality SL transition metal dichalcogenides (TMDCs) such as MoS₂ and WS₂ [1,2] we have epitaxially grown an ordered layer of HfS₂ on Au(111) by chemical vapour deposition (CVD). Monitoring the S 2p and Hf 4f core levels in real time by fast X-ray photoelectron spectroscopy (XPS) allows the fine-tuning of the relevant parameters – such as the dosing rate and temperature – during the growth. The characterization by X-ray photoelectron diffraction (XPD) and low-energy electron diffraction (LEED) gives insight into the crystal structure of the film grown in this way.
[1] Bana, H., et.al., 2D Mater. 5 035012 (2018)

[2] Bignardi, L. et.al., Phys. Rev. Mat. 3, 014003, (2019)