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O: Fachverband Oberflächenphysik
O 56: 2D Materials III: Growth, Structure and Substrate Interaction II (joint session O/CPP)
O 56.7: Talk
Wednesday, March 29, 2023, 16:30–16:45, GER 37
Electronic properties of epitaxially grown monolayer and bilayer VS2 on Au(111) — •Mikhail Fonin1, Sabina Simon1, Felix Förschner1, Jannik Dornseiff1, Julia Tesch1, Elena Voloshina2, and Yuriy S. Dedkov2 — 1Department of Physics, University of Konstanz, 78457 Konstanz, Germany — 2Department of Physics, Shanghai University, 99 Shangda Road, 200444 Shanghai, China
Electronic properties of metallic two-dimensional materials can be strongly influenced by the supporting substrates, upon charge transfer or hybridization effects. In this context, suppression of many-body states in metallic transition metal dichalcogenides epitaxially grown on metallic substrates was recently reported [1]. By combination of scanning tunneling microscopy and first principle calculations we study monolayers and bilayers of VS2 epitaxially grown on Au(111). We investigate the electronic properties of the monolayer and observe a metallic state with the presence of the incommensurate charge density wave state. Going form monolayer to bilayer VS2, we observe an evolution from the metallic state to an insulating state.
[1] C. E. Enders et al., Phys. Rev. B 94, 081404(R) 2016.