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P: Fachverband Plasmaphysik
P 12: Poster II
P 12.3: Poster
Mittwoch, 22. März 2023, 17:30–19:00, HSZ EG
Deposition of thin films from organosilicon precursors by means of photochemistry with VUV-radiation from an atmospheric pressure plasma jet — •Christina Reiser, Tristan Winzer, and Jan Benedikt — Institute of Experimental and Applied Physics, Kiel University, Kiel, Germany
Deposition of thin films using atmospheric pressure plasma (APP) is still limited due to the high collision rates and in the case of many precursors (C2H2, SiH4) also due to fast formation of particles in the gas phase, resulting from the fast polymerization of negative molecular ions. Activation of these precursors with VUV-photons should avoid the formation of the negative ions and, therefore, also particles.
In this work, a high purity noble gas plasma is used for producing intense VUV-radiation from noble gas excimer species. The gas flow through the plasma is guided in such a way, that the plasma and the effluent have no contact with the precursor gas flow, while the emitted radiation produces ions and radicals in the precursor gas flow directly in front of the treated surface. For optimizing deposition rates and film quality, parameter variations are carried out in which the photochemistry of organosilicon precursors is analyzed by ion mass spectrometry. Deposited films are characterized using Fourier transform infrared spectroscopy (FTIR).