SMuK 2023 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

T: Fachverband Teilchenphysik

T 45: Si-Strips, Pixel

T 45.4: Vortrag

Dienstag, 21. März 2023, 17:45–18:00, WIL/C307

Test beam analysis of irradiated, passive CMOS strip sensors — •Fabian Lex for the CMOS Strip Detectors collaboration — Albert-Ludwigs Universität, Freiburg, Germany

Nearly all envisioned future high-energy particle detectors will employ silicon sensors as their main tracking devices. Due to the increased demand in performance, large areas of the detectors will have to be covered with radiation hard silicon, facilitating the need for silicon sensors produced in large quantities, reliably and cost-efficiently.

A possible solution to these challenges has been found in the utilization of the CMOS process, which is an industrial standard, offering the advantage of a large choice of vendors and reduced production costs. To create the larger sensor structures typical for silicon strip trackers, the stitching process has to be used.

Currently three variations of passive CMOS strip sensors, produced by LFoundry in a 150 nm process, are being investigated. In order to examine the radiation hardness of the design and any possible effect of the stitching on position resolution, detection efficiency or charge collection efficiency, a test beam measurement at the Test Beam Facility at DESY Hamburg has been conducted, using the ALiBaVa (Analogue Liverpool, Barcelona, Valencia) system for DUT (Device under test) readout. In the course of the analysis, a new module to process the ALiBaVa data in the Corryvreckan Test Beam Data Reconstruction Framework has been developed. A summary of the results of this test beam analysis will be presented in this talk.