 |
14:00 |
HL 44.1 |
Low-temperature plasma-enhanced atomic layer deposition of tunable cobalt nitride thin films — •Lukas Alexander Kohlmaier, Matthias Kuhl, Ian D. Sharp, and Johanna Eichhorn
|
|
|
|
14:15 |
HL 44.2 |
High temperature growth of cubic gallium nitride by PAMBE — •Pascal Mahler, Dirk Reuter, and Donat J. As
|
|
|
|
14:30 |
HL 44.3 |
uniform large-area top-down GaN nanowire array fabrication with independently tunable diameter and spacing — •jingxuan kang, rose-mary jose, thomas auzelle, oliver brandt, and lutz geelhaar
|
|
|
|
14:45 |
HL 44.4 |
Metal modulated growth of cubic InGaN by Molecular Beam Epitaxy — •Silas A. Jentsch, Mario F. Zscherp, Nicolai M. Gimbel, Anja Henss, Donat J. As, Sangam Chatterjee, and Jörg Schörmann
|
|
|
|
15:00 |
HL 44.5 |
Molecular beam epitaxy of (Al,Sc)N nanowires — •Philipp John, Oliver Brandt, Achim Trampert, Lutz Geelhaar, and Thomas Auzelle
|
|
|
|
15:15 |
HL 44.6 |
Alloying and demixing in AlGaN/GaN nanowire heterostructures — •Rudolfo Hötzel, Lukas Lübken, Anton Schäning, Florian Krause, Andreas Rosenauer, Stephan Figge, and Martin Eickhoff
|
|
|
| |
15:30 |
|
15 min. break
|
|
|
|
15:45 |
HL 44.7 |
Highly spatially resolved investigation of structural and optical properties of a GaN-based p-n-diode — •Luca Greczmiel, F. Bertram, G. Schmidt, P. Veit, H. Eisele, A. Dempewolf, S. Petzold, J. Christen, A. Strittmatter, and A. Dadgar
|
|
|
|
16:00 |
HL 44.8 |
Optical and chemical characterisation of InxGa1−xN layers and nanowire arrays — •Aidan Campbell, Mikel Gómez Ruiz, Jingxuan Kang, Lutz Geelhaar, Oliver Brandt, and Jonas Lähnemann
|
|
|
|
16:15 |
HL 44.9 |
MBE growth of cubic InxGa1-xN over the entire GaN/InN composition range — •Mario F. Zscherp, Silas A. Jentsch, Marius J. Müller, Vitalii Lider, Celina Becker, Limei Chen, Mario Littmann, Falco Meier, Andreas Beyer, Detlev M. Hofmann, Donat J. As, Peter J. Klar, Kerstin Volz, Sangam Chatterjee, and Jörg Schörmann
|
|
|
|
16:30 |
HL 44.10 |
Influence of Surface and Subsurface Damage on GaN Wafer Processing and Laser Facet Fabrication — •Saad Makhladi, Matthias Friedler, Johannes Enslin, Carsten Netzel, Ji-Hye Kang, Erik Freier, and Sven Einfeldt
|
|
|
|
16:45 |
HL 44.11 |
HfN as conductive buffer for GaN epitaxy — •Christopher Lüttich, Florian Hörich, Jürgen Bläsing, André Strittmatter, and Armin Dadgar
|
|
|
