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HL: Fachverband Halbleiterphysik
HL 44: Nitrides: Preparation and characterization II
HL 44.2: Vortrag
Donnerstag, 21. März 2024, 14:15–14:30, EW 015
High temperature growth of cubic gallium nitride by PAMBE — •Pascal Mahler1, Dirk Reuter1,2, and Donat J. As1 — 1Paderborn University, Department of Physics, Warburger Strasse 100, 33098 Paderborn — 2Institut für Photonische Quantensysteme (PhoQS), Warburger Strasse 100, 33098 Paderborn
State of the art cubic gallium nitride layers when grown using plasma assisted molecular beam epitaxy (PAMBE) are usually deposited at a substrate temperature of around 720°C under slightly gallium rich conditions with one monolayer gallium present on the surface during growth. This allows to grow layers with <1% hexagonal GaN content and a roughness of 2-5nm. However, it was shown that for selective area growth of c-GaN higher substrate temperatures of at least 870°C are necessary and that growth of c-GaN can be stabilized at this temperature. Based on these findings, growth of c-GaN on un-patterned 3C-SiC (001) substrates at temperatures from 720°C to 900°C has been investigated. HRXRD measurements reveal that samples grown at a substrate temperature of 860°C showed a decrease in the ω-FWHM of the (002) c-GaN reflection compared to samples optimized for growth at 720°C which according to the Ayers model is linked to a decrease in dislocation density.