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DS: Fachverband Dünne Schichten

DS 11: Layer Deposition

DS 11.1: Vortrag

Mittwoch, 11. März 2026, 09:30–09:45, REC/B214

Photo-Assisted Atomic Layer Deposition — •Paul Butler^1,2, Simon Wörle^1,2, Pengyu Hu^1,3, Manfred Stemplinger^1,2, and Ian D. Sharp^1,2 — ¹Walter Schottky Institut, Technische Universität München, 85748, Garching, Germany — ²Physics Department, TUM School of Natural Science, Technische Universität München, 85748, Garching, Germany — ³Department of Electrical Engineering, TUM School of Computation, Information and Technology, Technische Universität München, 85748, Garching bei München, Germany

Atomic layer deposition (ALD) is a powerful technique for uniformly coating complex surfaces with thin films, though achieving lateral control remains one of its main challenges. This work demonstrates the implementation of visible-wavelength excitation to assist in the ALD process, thereby providing an opportunity for selective-area deposition using beam-shaping. We demonstrate that optical laser excitation can be used to assist in several ALD processes. An optical laser was used to selectively photo-assist the deposition of TiO₂ on gold as well as monolayer MoS₂ at low temperatures. The molecular precursors, titanium isopropoxide (TTIP) and ozone were used for the low-temperature deposition of TiO₂ on gold, while tetrakis(dimethylamido)titanium (TDMAT) and water were used for the deposition of TiO₂ on MoS₂. Photoexcitation is also shown to reduce the nucleation delay when MeCpPtMe₃ and ozone are used to deposit platinum films on Si and SiO₂ surfaces, using. Samples are characterized with spectroscopic ellipsometry and AFM before and after depositions, with in-situ ellipsometry during ALD procedures.

Keywords: Atomic Layer Deposition; Selective Area Deposition; Photo-assisted deposition; Thin Film Deposition