Dresden 2026 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 11: Layer Deposition
DS 11.3: Vortrag
Mittwoch, 11. März 2026, 10:00–10:15, REC/B214
Epitaxial growth of hexagonal boron nitride (h-BN) by thermal laser epitaxy (TLE) — •Markus A. Blonski1, Gideok Kim2, João Marcelo Lopes1, Audrey Gilbert1, Lutz Geelhaar1, Jochen Mannhart2, Darrell G. Schlom3, and Patrick Vogt1,2 — 1Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Berlin, Germany — 2Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany — 3Cornell University, Ithaca, USA
Thermal laser epitaxy (TLE) is a novel thin film synthesis technique in which the substrate and sources are heated by high-power infrared lasers. Without heating elements, TLE achieves unprecedentedly high growth temperatures and pressures, exceeding those of traditional methods like standard chemical vapor deposition (CVD) or molecular beam epitaxy (MBE). TLE enables thermal in situ substrate termination, accelerating surface treatment and avoiding pre-growth contamination. Using TLE, we map an unrivaled growth pressure and temperature (P-T) parameter space for h-BN growth on Al2O3(0001) substrates. To optimize substrate termination, the Al2O3 surface is nitridized to form an AlN adlayer at T∼1800 ∘C under an NH3 atmosphere with a pressure of P=10−3 mbar. This termination process is followed by h-BN growth at 1600 ∘C to 2000 ∘C with NH3 pressures ranging from 10−6 mbar to 10−1 mbar. We demonstrate epitaxial h-BN growth under unprecedented P-T conditions, characterized by Reflection high-energy electron diffraction, Fourier transform infrared spectroscopy, Raman spectroscopy and atomic force microscopy.
Keywords: TLE; h-BN; ultra-high temperature; epitaxy; 2D material