Dresden 2026 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 11: Layer Deposition
DS 11.5: Vortrag
Mittwoch, 11. März 2026, 10:45–11:00, REC/B214
Interface formation in ALD-based SnO2/CeOx heterostructures — •Dominic Guttmann1, Rudi Tschammer1, Carlos Morales1, Malgorzata Kot2, Michal Mazur2, Damian Wojcieszak2, Paulina Kapuscik2, Wiktoria Kolodzinska2, Jarosław Domaradzki2, and Jan Ingo Flege1 — 1Applied Physics and Semiconductor Spectroscopy, BTU Cottbus-Senftenberg, Cottbus 03046, Germany — 2Faculty of Electronics, Photonics and Microsystems, WUST, 50-372 Wroclaw, Poland
The electrical resistance of SnO2 ultrathin films (< 20 nm) made by atomic layer deposition (ALD) strongly depends on thickness, due to intrinsic film defects at interfaces arising from changes in the ALD reaction mechanism during the first cycles and from the film/substrate interaction. Modifying interface properties in SnO2/CeOx heterostructures can enhance H2 sensing performance. We studied the initial growth of SnO2 by ALD on CeOx substrates prepared by either electron beam evaporation (EBE) or ALD. Employing the commercial precursor tetrakis(dimethylamino)tin (TDMASn) and ozone (O3) as well as in vacuo and near-ambient-pressure X-ray photoelectron spectroscopy, we examined how substrate preparation affects the SnO2 nucleation behavior in the first cycles. SnO2 growth on EBE-CeOx indeed starts with the first precursor cycle, whereas ALD-CeOx requires an additional conditioning step. Connecting these findings to surface chemistry, distinct C1s and N1s signatures attributed to TDMASn adsorption indicate a slow C/N buildup, consistent with previous reports on ALD-grown SnO2 on Si, SiO2, and Al2O3.
Keywords: ALD; XPS; CeO2; SnO2