Dresden 2026 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 11: Layer Deposition

DS 11.7: Vortrag

Mittwoch, 11. März 2026, 11:15–11:30, REC/B214

Low-Temperature Atomic Layer Deposition of Rutile Titanium Dioxide Buffer Layers for Thermochromic Windows — •Jan Leithäuser, Waafa Al Nachwati, Philip Klement, Sangam Chatterjee, and Martin Becker — I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392 Gießen, Germany

Vanadium dioxide (VO₂) exhibits a reversible semiconductor-metal transition (SMT) at approx. 68^∘C and enables thermochromic smart windows that modulate solar heat gain. To achieve high solar modulation (T_sol) at industrially compatible temperatures, a smooth, chemically stable rutile TiO₂ buffer layer is required. Here, we demonstrate that atomic layer deposition (ALD) of TiO₂ at 200 ^∘C, followed by low-temperature annealing, results in dominant rutile at 220 ^∘C, provided the TiO₂ thickness is at leat 30 nm; thinner layers (10 nm) crystallize as anatase. Integrating such ALD-grown rutile buffers into VO₂ || TiO₂ || Glass structures allow for optimal VO₂ growth windows at 400 - 450 ^∘C and yields a T_sol comparable to that of high-temperature sputtered rutile buffers. The ALD approach maintains nanometer-scale roughness. This low-temperature route to rutile TiO₂ represents an advancement for scalable, energy-efficient thermochromic coatings compatible with temperature-sensitive substrates.

Keywords: Atomic layer deposition (ALD); Titanium dioxide (TiO2); Vanadium dioxide (VO2); Smart windows; Thermochromic