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HL: Fachverband Halbleiterphysik

HL 26: Poster II

HL 26.34: Poster

Mittwoch, 11. März 2026, 09:30–11:30, P1

Diamond devices for high contrast electrical readout of NV centers — •Melina F. V. Pees¹, Lina M. Todenhagen¹, Joachim P. Leibold², Dominik B. Bucher², and Martin S. Brandt¹ — ¹Walter Schottky Institut, TU Munich, Am Coulombwall 4, 85748 Garching — ²Department of Chemistry, TU Munich, Lichtenbergstr. 4, 85748 Garching

Nitrogen-vacancy (NV⁻) centers in diamond enable optically and electrically detected magnetic resonance (ODMR and EDMR/PDMR, respectively) and are a promising semiconductor platform for spin-based sensing. Metal contacts often influence the NV⁻ charge state, change current flow near the surface and worsen the spin contrast in resonance measurements. In this work we investigate shallow, implanted NV ensembles under Ti/Pt/Au contacts using combined photoluminescence, photocurrent and ODMR/EDMR measurements as a function of applied bias voltage, nitrogen implantation depth and position relative to the metallized surface. We have recently shown that Pt, just as other metals, strongly influences the charge state of the NV centers underneath the contacts, leading to mostly neutral or positively charged centers. Here, we show that via application of bias voltages, the negative charge state can be partially recovered, leading to an increase in the spin contrast. This approach allows to stabilize the NV⁻ charge state and improves the suitability of such diamond devices for quantum sensing applications.

Keywords: Nitrogen-vacancy complex; ODMR; EDMR; PDMR