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HL: Fachverband Halbleiterphysik

HL 9: Oxide Semiconductors: Growth and Fabrication

HL 9.3: Vortrag

Montag, 9. März 2026, 15:30–15:45, POT/0051

Growth and characterization of ultra-wide bandgap oxide semiconductor LiGa₅O₈ — •Nazar Masiuta, Sofie Vogt, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Felix Bloch Institute for Solid State Physics, Semiconductor Physics Group, Leipzig, Germany

Lithium gallium oxide (LiGa₅O₈) has been recently grown as an ultra-wide bandgap oxide semiconductor with robust p-type conductivity using mist chemical vapor deposition^[1]. This discovery suggests application of the material in high-power electronics by forming p-n junctions with n-type α-Ga₂O₃, β-Ga₂O₃, and isostructural γ-Ga₂O₃. However, establishing the origin of p-type conductivity of lithium gallium oxide remains an experimental challenge^[2], while a theoretical prediction argues that neither native nor dopant defects in LiGa₅O₈ could be responsible for it^[3]. We analyze the influence of pulsed laser deposition growth parameters on the quality of lithium gallium oxide films on different substrates. The structural, optical, and electrical characterization of LiGa₅O₈ is performed to determine the type of conductivity and its origin in the fabricated samples.

[1] K. Zhang et al., Adv. Electron. Mater. 11, 2300550 (2025).

[2] K. Zhang et al., APL Mater. 13(4), 041104 (2025).

[3] J. L. Lyons, J. Appl. Phys. 135(16), 165705 (2024).

Keywords: Lithium gallium oxide; ultra-wide bandgap