Dresden 2026 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

O: Fachverband Oberflächenphysik

O 11: Metal & Semiconductor substrates: Adsorption and reaction of small molecules II

O 11.2: Vortrag

Montag, 9. März 2026, 15:15–15:30, HSZ/0401

The Influence of Doping on Inelastic H Atom Scattering from Silicon — •Malte Opfermann, Kerstin Krüger, Sophia Tödter, and Oliver Bünermann — Institut für physikalische Chemie, Georg- August-Universität Göttingen, Tammannstraße 6, 37077 Göttingen

Inelastic H atom scattering experiments on the semiconducting Ge(111)c(2x8) surface have revealed a bimodal energy-loss distribution consisting of a narrow low energy-loss component and a broad high energy-loss component with an onset equal to the surface band gap. Theoretical calculations attribute the low energy-loss component to an adiabatic scattering mechanism at the adatom. The high energy-loss component is explained by a non-adiabatic scattering mechanism involving electron transfer across the surface band gap from the rest atom to the adatom.

Recently, we extended our studies to scattering experiments from the Si(100)2x1 surface. Although the experimental energy loss distributions resemble the bimodal behavior of Ge(111)c(2x8), the first component is broader, and the second exhibits a visible but less well-defined onset at the surface band gap. To gain further insight, we carried out scattering experiments from n-doped and p-doped surfaces. The first component shifts to lower energy losses for n-type doping and to higher energy losses for p-type doping, whereas the second component remains essentially unaffected. Based on the theoretical results for Ge(111)c(2x8), we propose a scattering mechanism for the Si(100)2x1 surface.

Keywords: Semiconductor; Silicon; Doping; Scattering; Hydrogen