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Regensburg 2013 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 67: Focus Session (Posters): Crystalline n-type semiconducting oxides - SnO2, Ga2O3, and In2O3 for novel devices

Mittwoch, 13. März 2013, 16:00–20:00, Poster A

16:00 HL 67.1 Properties of tin oxides prepared by Ion-Beam-Sputtering — •Martin Becker, Robert Hamann, Angelika Polity, Davar Feili, and Bruno K. Meyer
16:00 HL 67.2 Ab-initio investigation of various tin oxides — •Bianca Eifert and Christian Heiliger
16:00 HL 67.3 Structural properties and defect-induced conduction mechanism in spinel-type ferrites — •Kerstin Brachwitz, Michael Lorenz, and Marius Grundmann
16:00 HL 67.4 Low Rate Deep Level Transient Spectroscopy: A new method for detecting deep levels in wide gap semiconductors — •Rainer Pickenhain, Florian Schmidt, Otwin Breitenstein, Holger von Wenckstern, and Marius Grundmann
16:00 HL 67.5 ZnFe2O4 dielectric function — •Tammo Böntgen, Kerstin Brachwitz, Rüdiger Schmidt-Grund, Michael Lorenz, and Marius Grundmann
16:00 HL 67.6 CVD of Epitaxial SnO2 Films grown on c-cut and r-cut Sapphire by SnI2/O2 Precursor — •Yinmei Lu, Gunther Haas, Melanie Pinnisch, Philipp Hering, Martin Becker, Johannes Bieber, and Bruno Meyer
16:00 HL 67.7 Investigation of the Rutile Structure on the Semiconductor Oxides SnO2 Doped with Fe by the Perturbed Gamma-Gamma Angular Correlation Spectroscopy — •Juliana Marques Ramos, Thiago Martucci, Artur Wilson Carbonari, and Reiner Vianden
16:00 HL 67.8 Electronic properties of Si-doped (Ga,In)2O3 PLD thin films — •Marcus Purfürst, Stefan Müller, Zhipeng Zhang, Holger von Wenckstern, and Marius Grundmann
16:00 HL 67.9 Fabrication and characterization of thin β−Ga2O3 samples — •Srujana Dusari, Christine Bülow, Saskia F. Fischer, Zbigniew Galazka, and Martin Albrecht
16:00 HL 67.10 The Seebeck coefficient of In2O3 - Inferences on causes of unintentional conductivity and electron effective massNatalie Preissler, •Oliver Bierwagen, Ashok T. Ramu, and James S. Speck
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