Regensburg 2002 – wissenschaftliches Programm

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DS: Dünne Schichten

DS 23: Ionenimplantation: Ionenstrahlmischen

DS 23.2: Vortrag

Donnerstag, 14. März 2002, 09:45–10:00, HS 32

Ion beam mixing and compound formation in metal/semiconductor bilayers systems — •S. Dhar, M. Milosavljevic, P. Schaaf, N. Bibic, and K. -P. Lieb — Universität Göttingen, II. Physikalisches Institut and SFB 345, Bunsenstrasse 7-9, D-37073 Göttingen, Germany.

Ion beam mixing is a useful method for producing silicide and germanide compound layers at low temperatures. A number of mixing experiments with energetic inert gas ions were carried out in various metal/semiconductor bilayer systems (Fe/Si, Ta/Si, Cu/Ge, Ni/Ge, etc.) and the characterization was performed by Rutherford Backscattering Spectroscopy, Conversion Electron Mössbauer Spectroscopy, X-Ray Diffraction, and Transmission Electron Microscopy. The present results [1-3] show the important progress in the experimental findings and the theoretical [1,2,4,5] understanding concerning the growth of compound layers across the interface of highly reactive metal/semiconductor bilayer systems.

[1] S. Dhar, M. Milosavljevic, N. Bibic, K. -P. Lieb, Phys. Stat. Sol.(b) 222(2000)295 ; Phys. Rev. B (2002) in press.

[2] L. Rissanen, S. Dhar, K. -P. Lieb, Phys. Rev. B 63(2001)155411.

[3] M. Milosavljevic, S. Dhar, P. Schaaf, N. Bibic, Y. -L. Huang, M. Seibt, K. -P. Lieb, J. Appl. Phys. 90(2001)4474.

[4] S. Dhar, Y.N. Mohapatra, V.N. Kulkarni, Phys. Rev. B54(1996)5769.

[5] W. Bolse, Mat. Sci. Eng. R12(1994)53.

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