Dresden 2003 – wissenschaftliches Programm
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DS: Dünne Schichten
DS 24: Poster
DS 24.1: Poster
Dienstag, 25. März 2003, 14:30–17:00, P2a
In situ ATR-FTIR absorption spectroscopy on plasma deposited silicon thin films — •Peter van den Oever, Iain Houston, Junegie Hong, Erwin Kessels, and Richard van de Sanden — Department of applied Physics, Eindhoven University of Technology, Eindhoven, Netherlands
The highly sensitive attenuated total reflection Fourier transform infrared absorption spectroscopy technique (ATR-FTIR) has been used for in situ measurements of surface and bulk hydrides in hydrogenated amorphous silicon (a-Si:H) and microcrystalline silicon (µc-Si:H) films.
We have developed a data analysis procedure to obtain the quantitative hydrogen content from ATR-FTIR measurements. Using the developed procedures, we have investigated the surface composition in terms of silicon hydrides and the hydrogen bonding configurations as a function of the film thickness for various deposition conditions. The ATR-FTIR experiments reveal a series of thermal decomposition reactions from SiH3 to SiH2 to SiH on the surface of amorphous silicon films for increasing substrate temperature under SiH3 radical dominated plasma conditions.
Furthermore, we have investigated the transition from a-Si:H to µc-Si:H that occurs for increasing flow ratios of hydrogen over silane. For µc-Si:H films we observe a smaller hydrogen content. Using spectroscopic ellipsometry and ATR-FTIR spectroscopy for hydrogen depth profiling, the growth of the silicon films has been studied. After a very small incubation layer, the size of the crystallites in the material grows, until the crystallites make contact. From this point on, we observe columnar growth of the µc-Si:H film.