Dresden 2003 – wissenschaftliches Programm
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DS: Dünne Schichten
DS 24: Poster
DS 24.19: Poster
Dienstag, 25. März 2003, 14:30–17:00, P2a
Mechanisms of ion-beam assisted deposition: comparing yttria-stabilized zirconia and gadolinium-zirconia — •Christian Thiele1, Lars-Oliver Kautschor1, Sibylle Sievers1, Jörg Hoffmann2, and Herbert C. Freyhardt1,2 — 1Institut für Materialphysik, Universität Göttingen, 37083 Göttingen, Germany — 2Zentrum für Funktionswerkstoffe gem. GmbH ZFW, 37083 Göttingen, Germany
The deposition of biaxially textured thin layers on arbitrary substrates is an important technique for the YBCO-coated-conductors development. By means of an assisting ion beam as external force influencing the developing film (IBAD), a preferential crystal alignment can be achieved in different materials.
The deposition parameters for obtaining optimal texture of two different materials, yttria-stabilized zirconia (YSZ) and gadolinium-zirconia (GZO), are investigated. The development of the crystal texture was investigated using x-ray diffraction. Even though the fluorite type oxide YSZ and the (fluorite-like) pyrochlore type GZO have different crystal structures, both materials have similar optimal deposition parameters. The development of the microstructure was investigated by means of transmission electron microscopy. Different processes occur during film growth. E.g. the overgrowth of misoriented grains and continous rotation of the crystal orientation within single crystallites.
In contrast to Iijima (2001) it was shown that GZO has no significantly faster evolution of the in-plane texture than YSZ.