Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
DS: Dünne Schichten
DS 24: Poster
DS 24.20: Poster
Dienstag, 25. März 2003, 14:30–17:00, P2a
TEM investigations on texture development during the growth of IBAD YSZ films — •Sibylle Sievers1, Lars-Oliver Kautschor1, Jörg Hoffmann1,2, and Herbert C. Freyhardt1,2 — 1Institut für Materialphysik, Universität Göttingen, 37073 Göttingen — 2Zentrum für Funktionswerkstoffe gGmbH, 37073 Göttingen
Ion Beam Asisted Deposiition (IBAD) is the standard method to grow biaxially aligned Yttria-stabilized Zirconia films on amorphous or polycristalline substrates. Whereas it is well known that the quality of the texture improves with increasing film thickness, the mechanisms have not yet been fully understood. TEM investigations have been performed on films deposited at different η-relations (=ratio of the deposition rate and the current density of the assisting ions) in order to understand the basic mechanisms of the microstructural evolution.
Different growth stages could be distinguished whose relative extension is strongly dependent on the η-relation. In the first stage the out of plane texture evolves relatively fast. This is followed by a slow improvement of the in plane texture. The texure evolution appears to be a multivariate process. Several mechanisms could be identified. The importance of pressure induced texture evolution, overgrowth and defect mediated orientational changes is discussed.
This work was supported by the Siemens AG and the BMBF under grant number 13N7545A.