Dresden 2003 – wissenschaftliches Programm
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DS: Dünne Schichten
DS 24: Poster
DS 24.24: Poster
Dienstag, 25. März 2003, 14:30–17:00, P2a
Influence of particle and energy influx on ITO film formation by reactive dc magnetron sputtering — •Marion Quaas1, Hartmut Steffen2, Rainer Hippler2, and Harm Wulff1 — 1E.-M.-Arndt-Universität Greifswald, Inst. f. Chemie, Soldtmannstr. 23, D-17489 Greifswald — 2E.-M.-Arndt-Universität Greifswald, Inst. f. Physik, Domstr. 10a, D-17489 Greifswald
The present study focuses on the relations between deposition conditions and the evolution of the chemical composition of In/Sn as well as indium tin oxide (ITO) films. Films were deposited by means of reactive DC magnetron sputtering from a metallic In/Sn target at different oxygen partial pressures as well as negative substrate voltages. The energy flux towards the growing film and the ion energy distribution function of the negative oxygen ions were measured.
The films were investigated by grazing incidence x-ray diffractometry (GIXRD) and grazing incidence x-ray reflectometry (GIXR).
The phase composition of the as-deposited films changes from polycrystalline metallic In/Sn (deposition without oxygen) to x-ray amorphous ITO (2 sccm oxygen flow, substrate floating). A negative substrate voltage works like a diminished oxygen flow. Using annealing experiments (in situ High Temperature GIXRD) the phase composition and stoichiometry were determined.
Based on these investigations particle and energy balance calculations were performed. The mean part of deposited material are neutral species, but the decisive parameter for film composition is the energy and particle flux density of the negative charged oxygen species.