Dresden 2003 – wissenschaftliches Programm
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DS: Dünne Schichten
DS 24: Poster
DS 24.26: Poster
Dienstag, 25. März 2003, 14:30–17:00, P2a
Characterization of the Stoichiometry of Thin ILGAR-ZnO Layers by Heavy-Ion ERDA — •Erik Strub1, Marcus Bär1, Wolfgang Bohne1, Christian-Herbert Fischer1, Beate Leupolt2, Swen Lindner1, Jörg Röhrich1, and Bolko Schöneich2 — 1Hahn-Meitner-Institut Berlin, Glienicker Str. 100, 14109 Berlin, Germany — 2Fraunhofer Institut für Werkstoff- und Strahltechnik, Winterbergstr. 28, 01277 Dresden, Germany
ZnO layers deposited by the ILGAR technique (Ion Layer Gas Reaction) can replace conventional CdS buffers in chalkopyrite solar cells. CdS buffers are usually deposited by Chemical Bath Deposition (CBD), a batch-based, material inefficient method. In contrast, ILGAR is a sequential and cyclic, chemical low-cost deposition technique which works under atmospheric conditions. It is easily up-scalable and well suited for in-line, large-scale mass production. ILGAR-ZnO layers improve the device efficiencies, but the performance is very sensitive to their composition. The oxide-hydroxide ratio is a crucial parameter, especially as ILGAR primary leads to Zn(OH)2 which is simultaneously thermally dehydrated to the oxide.
Therefore, thin layers of ILGAR-ZnO prepared at different process temperatures have been examined by Heavy-Ion ERDA (Elastic Recoil Detection Analysis) to determine the ZnO/Zn(OH)2 stochiometry as well as kind and concentration of impurities. The ERDA technique allows for the simultaneous and absolute detection of all constituents. The goal was to calibrate an FT-IR spectrometer for routine examinations of ILGAR-ZnO. ERDA also reveals a temperature-dependent growth rate.