Dresden 2003 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 30: Photovoltaik
HL 30.17: Vortrag
Mittwoch, 26. März 2003, 18:30–18:45, BEY/81
Material properties of tricrystalline silicon for solar cell fabrication — •Christian Schmiga, Jan Schmidt, and Rudolf Hezel — Institut für Solarenergieforschung Hameln/Emmerthal (ISFH), Am Ohrberg 1, 31860 Emmerthal, Germany
Tricrystalline Czochralski-grown silicon (tri-Si) combines a cost-saving manufacturing process and high-quality material properties and, therefore, is a promising candidate to reduce the costs of solar cell fabrication. Despite the multitude of dislocations arising during crystal growth, we have measured uniformly high effective carrier lifetimes of 600–800 µs on 4–6 Ωcm tri-Si. Up to now tri-Si solar cells have shown relatively low short-circuit current densities of about 31–33 mA/cm2 because the three {110}-oriented grains cannot be textured by commonly used anisotropic etching solutions. We have optimised a novel chemical texturing step for tri-Si and manufactured metal/insulator/semiconductor-contacted phosphorus-diffused n+p junction silicon solar cells, featuring a spatially uniform surface texture over all three grains. With these cells a record high efficiency of 17.6 % has been achieved which is mainly due to an increased short-circuit current density of 37 mA/cm2 obtained by substantially reduced reflection and enhanced light trapping.