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10:45 |
HL 21.1 |
Spin lifetimes at GaAs (100) and (110) surfaces — •Jan-Peter Wüstenberg, Lijun Guo, Kevin Hiebbner, Hans-Christian Schneider, Michael Bauer, and Martin Aeschlimann
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11:00 |
HL 21.2 |
Strain-induced spin splitting determined from B=0 spin precession, and spin lifetimes of drifting electrons in n-GaAs — •Markus Beck, Claus Metzner, Stefan Malzer und Gottfried H. Döhler
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11:15 |
HL 21.3 |
Diluted magnetic semiconductor resonant tunneling diodes as spin polarized current detectors. — •Anatoliy Slobodskyy, Charles Gould, Taras Slobodskyy, Peter Grabs, David Sánchez, Georg Schmidt, and Laurens Molenkamp
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11:30 |
HL 21.4 |
Magnetotransport experiments in (311)A-(Ga,Mn)As — •Matthias Döppe, Ursula Wurstbauer, Matthias Reinwald, Werner Wegscheider und Dieter Weiss
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11:45 |
HL 21.5 |
Role of carrier lifetime and spin relaxation time for spin injection in an InGaAs detector — •L. Schreiber, K. Schmalbuch, N. Müsgens, B. Beschoten, G. Güntherodt, A. Kawaharazuka, M. Ramsteiner, J. Herfort, H.-P. Schönherr, and K. H. Ploog
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12:00 |
HL 21.6 |
All optical probe of dynamic nuclear spin polarization in n-GaAs — •Klaus Schmalbuch, Lars Schreiber, Marcus Heidkamp, Bernd Beschoten, and Gernot Güntherodt
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12:15 |
HL 21.7 |
An all electrical detection of spin Rabi oscillation in crystalline silicon — •Christoph Boehme and Klaus Lips
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12:30 |
HL 21.8 |
Anisotropy Analysis of GaMnAs on GaAs (001) and (311)A by Magnetotransport and Ferromagnetic Resonance — •Matthias Reinwald, Ursula Wurstbauer, Matthias Döppe, Christoph Bihler, Hans Huebl, Sebastian Gönnenwein, Martin Brandt, Dieter Weiss, and Werner Wegscheider
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12:45 |
HL 21.9 |
Pulsed electrical spin injection into III-V semiconductor heterostructures — •Nicolas Müsgens, Lars Schreiber, Georg Richter, Bernd Beschoten, Gernot Güntherodt, and Paul A. Crowell
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