Berlin 2005 –
            
              scientific programme
            
          
        
        
        
        
        
      
      
  
    
  
  O 39: Nanostrukturen IV
  Tuesday, March 8, 2005, 10:45–13:00, TU EB420
  
    
  
  
    
      
        
          
            
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          10:45 | 
          O 39.1 | 
          
            
            
              
                Formation and decay of Si/Ge nanostructures at the atomic level — •Bert Voigtländer, Neelima Paul, Vasily Cherepanov, and Josef Mysliveček
              
            
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          11:00 | 
          O 39.2 | 
          
            
            
              
                STM contrast between Ge and Si atoms incorporated in the Si(111)-√(3)× √(3)-Bi surface — •Josef Mysliveček, Neelima Paul, and Bert Voigtländer
              
            
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          11:15 | 
          O 39.3 | 
          
            
            
              
                Strukturelle Untersuchungen von Dysprosiumsilizid-Nanodrähten auf vizinalen Si(001)-Oberflächen mittels Rastertunnelmikroskopie und LEED — •N. Tschirner, S. K. Becker, H. Eisele und M. Dähne
              
            
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          11:30 | 
          O 39.4 | 
          
            
            
              
                Local electronic properties of the one-dimensional Si(557)-Au surface — •M. Sauter, M. Schöck, R. Hoffmann, C. Sürgers, and H. v. Löhneysen
              
            
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          11:45 | 
          O 39.5 | 
          
            
            
              
                Lead on hydrogen terminated Si(111)1x1: STM and surface x-ray diffraction — •C. Rettig, V. Chamard, T.-L. Lee, J. Zegenhagen, and H. Hövel
              
            
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          12:00 | 
          O 39.6 | 
          
            
            
              
                Annealing induced 2D nano-patterning of Ga/Si(111) studied by STM — •Subhashis Gangopadhyay, Thomas Schmidt, and Jens Falta
              
            
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          12:15 | 
          O 39.7 | 
          
            
            
              
                Stöchiometriebestimmung von III-V Halbleiternanostrukturen mittels Querschnittsrastertunnelmikroskopie — •Holger Eisele, Rainer Timm, Andrea Lenz, Oliver Flebbe, Ernst Lenz, Ferdinand Streicher und Mario Dähne
              
            
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          12:30 | 
          O 39.8 | 
          
            
            
              
                Querschnitts-Rastertunnelmikroskopie an stickstoffhaltigen InAs/GaAs-Heterostrukturen — •M. Müller, A. Lenz, L. Ivanova, R. Timm, H. Eisele, M. Dähne, O. Schumann, L. Geelhaar und H. Riechert
              
            
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          12:45 | 
          O 39.9 | 
          
            
            
              
                Raman spectroscopy on double-walled carbon nanotubes — •Wencai Ren, Feng Li, Huihong Qian, Hui Qian, Thorsten Staedler, Achim Hartschuh, Xin Jiang, and Hui-Ming Cheng
              
            
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