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Berlin 2008 – wissenschaftliches Programm

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DF: Fachverband Dielektrische Festkörper

DF 11: Dielectric and ferroelectric thin films and nanostructures I

Mittwoch, 27. Februar 2008, 14:00–17:00, EB 107

14:00 DF 11.1 The impact of strain on the properties of ferroelectric bilayers: A LGD approach — •Ludwig Geske, I.B. Misirlioglu, Ionela Vrejoiu, Marin Alexe, and Dietrich Hesse
14:20 DF 11.2 Ferroelectricity in antiferroelectric epitaxial PbZrO3 films with different orientations — •Ksenia Boldyreva, Lucian Pintilie, Marin Alexe, and Dietrich Hesse
14:40 DF 11.3 Static and Dynamic Properties of Ferroelectric Nanostructures and Multiferroic Bulk Systems: A Multiscale Approach — •Thomas Michael, Julia Wesselinowa, and Steffen Trimper
15:00 DF 11.4 Ferroelectric lithography on doped LiNbO3 single crystals — •Alexander Haußmann and Lukas M. Eng
15:20 DF 11.5 Electron emission from ferroelectric thin films induced by polarization switching — •Oliver Mieth, Hannes Klumbies, Günter Milde, Gerald Gerlach, and Lukas Eng
15:40 DF 11.6 Field effect transistor of graphitized polyimide with P(VDF-TrFE) as gate insulator — •I. Lazareva, Y. Koval, P. Müller, I. Paloumpa, K. Müller, and D. Schmeisser
16:00 DF 11.7 Investigations on ferroelectric properties of P(VDF/TrFE) and BaTiO3 by local field and Monte Carlo computations — •Markus Kühn and Herbert Kliem
16:20 DF 11.8 Probing ferroelectricity in ultrathin wedged epitaxial BaTiO3 films — •Adrian Petraru, Hermann Kohlstedt, Axel Solbach, Nikolay Pertsev, Uwe Klemradt, Willi Zander, Jürgen Schubert, and Rainer Waser
16:40 DF 11.9 A combined first principles and electron-holographic aproach to domain boundaries in (multi)ferroic materials — •Axel Rother, Nicola Spaldin, and Hannes Lichte
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