Berlin 2008 – wissenschaftliches Programm
DF 11.6: Vortrag
Mittwoch, 27. Februar 2008, 15:40–16:00, EB 107
Field effect transistor of graphitized polyimide with P(VDF-TrFE) as gate insulator — •I. Lazareva1, Y. Koval1, P. Müller1, I. Paloumpa2, K. Müller2, and D. Schmeisser2 — 1Institut für Physik der Kondensierten Materie, Universität Erlangen-Nürnberg, Erwin-Rommel Str. 1, 91058 Erlangen, Germany — 2Lehrstuhl Angewandte Physik/Sensorik, Brandenburgische Technische Universität Cottbus, Konrad-Wachsmann-Allee 1, 03046 Cottbus, Germany
Surfaces of polyimide films were graphitized by low-energy ion irradiation. The conductivity was between 10−5 to 200 S/cm . We prepared field effect transistors using this material. Ferroelectric P(VDF-TrFE) was used as gate insulator. The thickness of P(VDF-TrFE) varied from 120 nm to 1200 nm. Properties of P(VDF-TrFE) were investigated by current-voltage measurements of metal/ P(VDF-TrFE)/metal capacitors. We have found that at room temperature, the coercive field of P(VDF-TrFE) does not depend on the film thickness. At lower temperatures the coercive field increases proportionally to the reciprocal temperature. Remnant polarization is 9.5 µC/cm2. It slightly rises with decreasing temperature. Our recent results of field effect mobility, carrier concentration and threshold voltage are presented.
 I. Lazareva, Y. Koval, M. Alam, S. Strömsdörfer, P. Müller, Appl. Phys. Lett. 90, 262108 (2007)