DF 4: High-k dielectrics for highly scaled Silicon-based Micro- and Nanoelectronics
Montag, 25. Februar 2008, 14:00–17:00, EB 107
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14:00 |
DF 4.1 |
Hauptvortrag:
High-k gate dielectrics on silicon and on high-mobility semiconductors: Atomic-scale phenomena underlying transistor performance — •Martin M. Frank
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14:40 |
DF 4.2 |
Hauptvortrag:
Molecular Beam Epitaxy of crystalline oxides on Si for C-MOS and for the monolithic integration of semiconductors on Silicon — •Saint-Girons Guillaume, Merckling Clément, El-Kazzi Mario, Becerra Loic, Regreny Philippe, Patriarche Gilles, Largeau Ludovic, Favre-Nicolin Vincent, and Hollinger Guy
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15:05 |
DF 4.3 |
Hauptvortrag:
Damascene metal gate technology: A solution to high-k gate stack challenges? — •Udo Schwalke
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15:30 |
DF 4.4 |
Hauptvortrag:
Do new materials solve the upcoming challenges of future DRAM memory cells? — •Uwe Schröder
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16:10 |
DF 4.5 |
Hauptvortrag:
AVD and ALD developments for next generation MIM capacitors and memory applications — Peter K. Baumann, Christoph Lohe, and •Michael Heuken
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16:35 |
DF 4.6 |
Hauptvortrag:
MIM Capacitors for Wireless Communication Technologies — •Christian Wenger
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