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Berlin 2008 – scientific programme

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DS: Fachverband Dünne Schichten

DS 28: Trends in Ion Beam Technology: From the Fundamentals to the Application

Thursday, February 28, 2008, 16:15–17:45, H 2013

16:15 DS 28.1 Epitaxial TiN film deposition at different substrate temperatures using hyperthermal titanium ions — •J. W. Gerlach, A. Wolfsteller, T. Höche, and B. Rauschenbach
16:30 DS 28.2 Ion beam synthesis of Mn/Sb clusters in silicon — •Michael Steinert, Andreas Undisz, Markus Rettenmayr, and Werner Wesch
16:45 DS 28.3 Diffusion contrasts of Gold in Silicon induced by ion bombardmentXiangzun Wang, •Moritz Trautvetter, Andreas Klimmer, and Paul Ziemann
17:00 DS 28.4 cavity layer introduction in SIMOX technology — •Xin Ou, Reinhard Kögler, Arndt Mücklich, Wolfgang Skorupa, and Wolfhard Möller
17:15 DS 28.5 Controlled self-organization due to sputtering on Si surfaces by lithographic pre-patterning — •Bashkim Ziberi, Theresa Lutz, Renate Fechner, Dietmar Hirsch, Klaus Zimmer, Frank Frost, and Bernd Rauschenbach
17:30 DS 28.6 SAXS studies of ion-beam induced nano-sized silver metal clusters in glass — •Ivo Zizak, Heinz-Eberhard Mahnke, and Vasil Koteski
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